DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications This device is

文件：253.27 Kbytes 页数：5 Pages

SSC

Silicon Standard Corp.

DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications This device is

文件：253.27 Kbytes 页数：5 Pages

SSC

Silicon Standard Corp.

TELUX / Utilizing one of the world?셲 brightest (AS) AllnGaP technologies (OMA) / High luminous flux

文件：224.54 Kbytes 页数：6 Pages

VAISH

威世

VISIDNCAB

文件：131.18 Kbytes 页数：1 Pages

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