丝印：AP5；Package：UDFN6；Power Management Switches

Features (1) AEC-Q101 qualified (Note 1) (2) 1.8 V drive (3) Low drain-source on-resistance : RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) Applications • Power Mana

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TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch×2\nGeneration：U-MOSⅥ\nInternal Connection：Independent\nComponent Product (Q1)：SSM6P69NU\nComponent Product (Q2)：SSM6P69NU\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain-Source voltage VDSS -20 V \nDrain current (Q1) ID -4 A \nGate-Source voltage (Q1) VGSS -12/+6 V \nDrain current (Q2) ID -4 A \nGate-Source voltage (Q2) VGSS -12/+6 V \nPower Dissipation PD 1 W ;

Toshiba

东芝

TO-220

SUPER超致

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SOP

DDC

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TO-220

仙童

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