丝印：AN8；Package：UDFN6；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)

文件：249.05 Kbytes 页数：9 Pages

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丝印：AN8；Package：UDFN6；Power Management Switches

文件：263.15 Kbytes 页数：9 Pages

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MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V)

文件：249.05 Kbytes 页数：9 Pages

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Small Low ON resistance MOSFETs

Feature：High ESD protected\nPolarity：N-ch×2\nGeneration：U-MOSⅦ-H\nInternal Connection：Independent\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current (Q1) ID 4 A \nDrain-Source voltage (Q1) VDSS 30 V \nGate-Source voltage (Q1) VGSS 12/-8 V \nDrain current (Q2) ID 4 A \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q2) VGSS 12/-8 V \nPower Dissipation PD 1 W ;

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