Small Low ON resistance MOSFETs

Polarity：N-ch×2\nGeneration：U-MOSⅢ\nInternal Connection：Independent\nComponent Product (Q1)：SSM3K35AMFV\nComponent Product (Q2)：SSM3K35AMFV\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current (Q1) ID 0.25 A \nDrain-Source voltage (Q1) VDSS 20 V \nGate-Source voltage (Q1) VGSS +/-10 V \nDrain current (Q2) ID 0.25 A \nDrain-Source voltage (Q2) VDSS 20 V \nGate-Source voltage (Q2) VGSS +/-10 V ;

Toshiba

东芝

丝印：DX；Package：US6；High-Speed Switching

文件：254.22 Kbytes 页数：9 Pages

TOSHIBA

东芝

Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V)

文件：193.18 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed Switching Applications

文件：210.28 Kbytes 页数：5 Pages

TOSHIBA

东芝