SSM6N357R

丝印：KR1；Package：TSOP6F；MOSFETs Silicon N-Channel MOS

1.Applications •RelayDrivers 2.Features (1)AEC-Q101qualified(Note1) (2)3.0-Vgatedrivevoltage. (3)Built-inInternalZenerdiodesandresistors. Note1:Fordetailinformation,pleasecontactoursales.

SSM6N357R

Small Low ON resistance MOSFETs; Drain current (Q1) ID 0.65 A \nDrain-Source voltage (Q1) VDSS 60 V \nGate-Source voltage (Q1) VGSS ±12 V \nDrain current (Q2) ID 0.65 A \nDrain-Source voltage (Q2) VDSS 60 V \nGate-Source voltage (Q2) VGSS ±12 V \nPower Dissipation PD 1 W \n;

Feature：Relay Drivers\nPolarity：N-ch×2\nGeneration：π-MOSⅤ\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\n

SSM6N357R

丝印：KR1；Package：TSOP6F；Relay Drivers

SSM6N357R_V01

MOSFETs Silicon N-Channel MOS

1.Applications •RelayDrivers 2.Features (1)AEC-Q101qualified(Note1) (2)3.0-Vgatedrivevoltage. (3)Built-inInternalZenerdiodesandresistors. Note1:Fordetailinformation,pleasecontactoursales.