丝印：KFU；Package：TSOP6F；MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.0-V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) R

文件：278.14 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：KFU；Package：TSOP6F；Power Management Switches DC-DC Converters

文件：285.12 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon N-channel MOS

1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.0-V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) R

文件：278.14 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Application Scope：DC-DC Converters / Power Management Switches\nFeature：Low drain-source on-resistance\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nInternal Connection：Single\nAEC-Q101：Qualified(*)\nRoHS Compatible Product(s) (#)：Available Drain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V \nDrain current ID 6.0 A \nPower Dissipation PD 1.5 W ;

Toshiba

东芝