High-Speed Switching Applications

○ High-Speed Switching Applications ○ Power Management Switch Applications ​​​​​​​ • 1.5V drive • Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V)

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

N-Channel 30 V (D-S) MOSFET

文件：1.00945 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

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TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 2 A \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝