TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

○ DC/DC Converter Application ○ High-Speed Switching Applications • 4.0 V drive • Low ON-resistance : RDS(ON) = 225mΩ max (@VGS = −4 V) : RDS(ON) = 117mΩ max (@VGS = −10 V)

文件：223.78 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

P-Channel 20 V (D-S) MOSFET

文件：1.059 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Small Low ON resistance MOSFETs

Polarity：P-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -2 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝