Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High Speed Switching Applications

文件：159.64 Kbytes 页数：5 Pages

TOSHIBA

东芝

Small-signal MOSFET

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID 0.5 A \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS ±8 V ;

Toshiba

东芝

13 To 40V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.31636 Mbytes 页数：5 Pages

UNSEMI

优恩半导体

13 To 40V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01 High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time P

文件：2.31636 Mbytes 页数：5 Pages

UNSEMI

优恩半导体