SSM6J212FE

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=94.0mΩ(max)(@VGS=-1.5V) RDS(ON)=65.4mΩ(max)(@VGS=-1.8V) RDS(ON)=49.0mΩ(max)(@VGS=-2.5V)

SSM6J212FE

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM6J212FE

Small Low ON resistance MOSFETs; Drain current ID -4 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-8 V \n;

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\n

SSM6J212FE_14

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)