Small Low ON resistance MOSFETs

Polarity：P-ch×2\nInternal Connection：Common source\nComponent Product (Q1)：SSM3J15FU\nComponent Product (Q2)：SSM3J15FU\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current (Q1) ID -0.1 A \nDrain-Source voltage (Q1) VDSS -30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nDrain current (Q2) ID -0.1 A \nDrain-Source voltage (Q2) VDSS -30 V \nGate-Source voltage (Q2) VGSS +/-20 V \nPower Dissipation PD 0.2 W ;

Toshiba

东芝

High Speed Switching Applications

文件：190.46 Kbytes 页数：5 Pages

TOSHIBA

东芝

P - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS

文件：238.07 Kbytes 页数：4 Pages

MOSPEC

统懋

P-Channel Enhancement-Mode Power Field-Effect Transistors

文件：88.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-Channel Enhancement-Mode Power Field-Effect Transistors

文件：88.77 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司