Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode

文件：228.48 Kbytes 页数：8 Pages

TOSHIBA

东芝

Multi-chip discrete device (N-ch + SBD)

Generation：U-MOSⅢ\nInternal Connection：Independent\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current (Q1) ID 1.6 A \nQ2 Average Forward Current IO 700 mA \nDrain-Source voltage (Q1) VDSS 30 V \nQ2 Repetitive Peak Reverse Voltage VRRM 30 V ;

Toshiba

东芝

Power Transistor 80 V, 8 A Dual General Purpose PNP

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.97976 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

Military 28Vin Filter Input Attenuator Module

文件：188.73 Kbytes 页数：5 Pages

VICOR

N-Channel Advanced Power MOSFET

文件：370.47 Kbytes 页数：9 Pages

RUICHIPS

锐骏半导体