Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅦ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.17 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

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MOSFETs Silicon N-Channel MOS

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MOSFETs Silicon N-Channel MOS

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MOSFETs Silicon N-Channel MOS

Applications • High-Speed Switching Features 1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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MOSFETs Silicon N-Channel MOS

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