Small Low ON resistance MOSFETs

Feature：High ESD protected\nPolarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.1 A \nPower Dissipation PD 0.15 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

文件：204.4 Kbytes 页数：5 Pages

TOSHIBA

东芝

Composite Transistor For high speed switching Silicon N-channel MOSFET

DESCRIPTION RT3K44M is a composite transistor built with two INK0010AX chips in SC-88 package. FEATURE ◾ Input impedance is high, and not necessary to consider a drive electric current. ◾ Vth is low, and drive by low voltage is possible. Vth=1.0～2.0V ◾ Low on Resistance. RDS(on)=4.0Ω(

文件：149.14 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

文件：171.88 Kbytes 页数：5 Pages

TOSHIBA

东芝