Small Low ON resistance MOSFETs

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.5 A \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝

丝印：NS；Package：2-2H1B；TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

文件：216.03 Kbytes 页数：5 Pages

TOSHIBA

东芝

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Available in bidirectional polarity only • 3000 W peak pulse power capability with a (10/1000 μs) waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende

文件：102.78 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Surface Mount TRANSZORB® Transient Voltage Suppressors

文件：91.78 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世