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SSM3K376R

MOSFETsSiliconN-ChannelMOS

1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.8-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM3K376R

MOSFETsSiliconN-ChannelMOS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM3K376RLF

MOSFETsSiliconN-ChannelMOS

1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.8-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM3K376RLXGF

MOSFETsSiliconN-ChannelMOS

1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.8-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

SSM3K376RLXHF

MOSFETsSiliconN-ChannelMOS

1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)1.8-Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=56mΩ(max)(@VGS=4.5V) RDS(ON)=72mΩ(max)(@VGS=2.5V) RDS(ON

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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