首页 >SSM3K361R.LF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS(U-MOS??H) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS 1.Applications •PowerManagementSwitches •DC-DCConverters 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)175℃MOSFET (3)4.5Vdrive (4)Lowdrain-sourceon-resistance :RDS(ON)=65mΩ(typ.)(@VGS=4.5V) RDS(ON)=51mΩ(typ.)(@VGS=10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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