丝印：KFN；Package：SOT-23F；MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • DC-DC Converters Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)

文件：268.02 Kbytes 页数：9 Pages

TOSHIBA

东芝

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：482.06 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Power Management Switches DC-DC Converters

文件：225.91 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

Applications • Power Management Switches • DC-DC Converters Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 95 mΩ (max) (@VGS = 10 V) RDS(ON) = 140 mΩ (max) (@VGS = 4.5 V)

文件：268.02 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅦ-H\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 3 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝