Small Low ON resistance MOSFETs

Polarity：N-ch\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 2.5 A \nPower Dissipation PD 1 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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MOSFETs Silicon N-Channel MOS

文件：232.35 Kbytes 页数：9 Pages

TOSHIBA

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N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Battery Switch • DC/DC Converter

文件：509.41 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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Field-Effect Transistor Silicon N-Channel MOS Type (U-MOS??

○ Load Switching Applications ○ High-Speed Switching Applications • 4.5 V drive • Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)

文件：219.05 Kbytes 页数：6 Pages

TOSHIBA

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