首页 >SSM3J356R,LCKF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=400mΩ(max)(@VGS=-4.0V) RDS(ON)=300mΩ(max)(@VGS=-10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOS?? | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=400mΩ(max)(@VGS=-4.0V) RDS(ON)=300mΩ(max)(@VGS=-10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=400mΩ(max)(@VGS=-4.0V) RDS(ON)=300mΩ(max)(@VGS=-10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vgatedrivevoltage. (3)Lowdrain-sourceon-resistance :RDS(ON)=400mΩ(max)(@VGS=-4.0V) RDS(ON)=300mΩ(max)(@VGS=-10V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
