首页 >SSM3J351R.LF(T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOS?? | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconP-ChannelMOS(U-MOSVI) Applications •PowerManagementSwitches Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)4Vdrive (3)Lowdrain-sourceon-resistance :RDS(ON)=107mΩ(typ.)(VGS=-10V) RDS(ON)=122mΩ(typ.)(VGS=-4.5V) RDS(ON)=129mΩ(typ.)(VGS=-4.0V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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