TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

○ Power Management Switch Applications • 1.2-V drive • Low ON-resistance: RDS(ON) = 94 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (@VGS = -1.8 V)

文件：215.49 Kbytes 页数：6 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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丝印：JJK；Package：UFM；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V)

文件：451.66 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 94 mΩ (max) (VGS = -1.2 V) RDS(ON) = 39 mΩ (max) (VGS = -1.5 V) RDS(ON) = 29 mΩ (max) (VGS = -1.8 V) RDS(ON) = 21 mΩ (max) (VGS = -2.5 V) RDS(ON) = 17 mΩ (max) (VGS = -4.5 V)

文件：451.66 Kbytes 页数：9 Pages

TOSHIBA

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Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID -5.4 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -12 V \nGate-Source voltage VGSS +/-6 V ;

Toshiba

东芝