Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications

High Speed Switching Applications • Small package • Low on resistance : Ron = 0.4 Ω (max) (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage

文件：614.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.56 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Small-signal MOSFET

Polarity：P-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available Drain current ID -0.7 A \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：490.55 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Power Management Switch High Speed Switching Applications • Small Package • Low on Resistance : Ron = 0.4 Ω (max) (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage

文件：169.82 Kbytes 页数：5 Pages

TOSHIBA

东芝