SSM3J01F

Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications

HighSpeedSwitchingApplications •Smallpackage •Lowonresistance:Ron=0.4Ω(max)(VGS=−4V) :Ron=0.6Ω(max)(VGS=−2.5V) •Lowgatethresholdvoltage

SSM3J01F

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J01F

Small-signal MOSFET; Drain current ID -0.7 A \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-10 V \n;

Polarity：P-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\n

SSM3J01T

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

SSM3J01T

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SSM3J01T

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType

PowerManagementSwitch HighSpeedSwitchingApplications •SmallPackage •LowonResistance:Ron=0.4Ω(max)(@VGS=−4V) :Ron=0.6Ω(max)(@VGS=−2.5V) •LowGateThresholdVoltage