首页 >SSM3J01(TE85LF)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
FieldEffectTransistorSiliconPChannelMOSTypeHighSpeedSwitchingApplications HighSpeedSwitchingApplications •Smallpackage •Lowonresistance:Ron=0.4Ω(max)(VGS=−4V) :Ron=0.6Ω(max)(VGS=−2.5V) •Lowgatethresholdvoltage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel30V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType PowerManagementSwitch HighSpeedSwitchingApplications •SmallPackage •LowonResistance:Ron=0.4Ω(max)(@VGS=−4V) :Ron=0.6Ω(max)(@VGS=−2.5V) •LowGateThresholdVoltage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
