isc N-Channel MOSFET Transistor

文件：290.22 Kbytes 页数：2 Pages

ISC

无锡固电

Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ

Features • AEC-Q101 qualified • SCIS energy of 320 mJ @ TJ = 25 °C • Parts are 100 tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor

文件：551.2 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ

Features • AEC-Q101 qualified • SCIS energy of 320 mJ @ TJ = 25 °C • Parts are 100 tested in SCIS • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Very low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor

文件：551.2 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Fast Switching

文件：60.48 Kbytes 页数：2 Pages

ISC

无锡固电

400V, 26A N-CHANNEL POWER MOSFET

文件：182.69 Kbytes 页数：6 Pages

UTC

友顺

isc N-Channel MOSFET Transistor

文件：359.75 Kbytes 页数：2 Pages

ISC

无锡固电