600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：686.47 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

520V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：600.21 Kbytes 页数：9 Pages

FAIRCHILD

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Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA (Max.) @ VDS= 600V Low RDS(ON) : 9.390Ω (Typ.)

文件：628.95 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：607.89 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：647.12 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA (Max.) @ VDS = 800V ■ Low RDS(ON) : 4.688 Ω (Typ.)

文件：264.76 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

文件：642.56 Kbytes 页数：9 Pages

FAIRCHILD

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INTEGRATED DTMF RECEIVER

[Silicon Systems, Inc.] DESCRIPTION FEATURES

文件：108.19 Kbytes 页数：8 Pages

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DTMF TRANSCEIVERS

[Silicon Systems] DESCRIPTION Silicon System SSI 75T2089/2090/2091 are complete Dual-Tone Multifrequency (DTMF) Transceivers that can both generate and detect all 16 DTMF tone-pair. These ICs integrate the performance-proven SSI 75T202 DTMF receiver with a DTMF generator circuit.

文件：118.83 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

DTMF TRANSCEIVERS

[Silicon Systems] DESCRIPTION Silicon System SSI 75T2089/2090/2091 are complete Dual-Tone Multifrequency (DTMF) Transceivers that can both generate and detect all 16 DTMF tone-pair. These ICs integrate the performance-proven SSI 75T202 DTMF receiver with a DTMF generator circuit.

文件：118.83 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商