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8N18

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP8N18

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=180V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

P8N18

N-CHANNELLOGICLEVELPOWERFIELDEFFECTTRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

RFM8N18

N-CHANNELLOGICLEVELPOWERFIELDEFFECTTRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

RFM8N18L

N-CHANNELLOGICLEVELPOWERFIELDEFFECTTRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

RFP8N18

N-CHANNELLOGICLEVELPOWERFIELDEFFECTTRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

RFP8N18L

N-CHANNELLOGICLEVELPOWERFIELDEFFECTTRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

SEFM8N18

N-CHANNELPOWERMOSTRANSISTORS

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

SEFM8N18

N-CHANNELPOWERMOSTRANSISTORS

HIGHSPEEDSWITCHINGAPPLICATIONS Theseproductsarediffusedmulti-cellsilicongate N-ChannelenhancementmodePower-Mosfield effecttransistors.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

SEFP8N18

N-CHANNELPOWERMOSTRANSISTORS

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

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