SSG11N06S-C资料使用说明书贸易商喜可士-114ic电子网

首页 >SSG11N06S-C>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
SSG11N06S-C	文件：300 bytes Page：1 Pages	MosFET	Secos 喜可士	Secos
11N06	文件：114.92 Kbytes Page：12 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa 文件：114.92 Kbytes 页数：12 Pages	PHI 飞利浦	PHI
11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa 文件：114.92 Kbytes 页数：12 Pages	PHI 飞利浦	PHI
11N06LTA	文件：114.92 Kbytes Page：12 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB11N06LT is supplied in the SOT404 (D2PAK) surface mounting pa 文件：114.92 Kbytes 页数：12 Pages	PHI 飞利浦	PHI

更多SSG11N06S-C供应商更新时间2025-11-1 14:01:00