StarMOST Power MOSFET

Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar st

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Good-Ark

固锝电子

14A, 250V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, pro

文件：303.71 Kbytes 页数：7 Pages

SILAN

士兰微

14A, 250V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, pro

文件：303.71 Kbytes 页数：7 Pages

SILAN

士兰微

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：220.35 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：157.91 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET 250V, 10.2A, 0.28(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Featu

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MGCHIP