14A, 250V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, pro

文件：303.71 Kbytes 页数：7 Pages

SILAN

士兰微

丝印：14N25CD；Package：TO-252-2L；14A, 250V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF14N25CD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, pro

文件：303.71 Kbytes 页数：7 Pages

SILAN

士兰微

F-CellTM系列C版高压MOSFET

SVF14N25CD N沟道增强型中低压功率MOS场效应晶体管采用士兰微电子F-CellTM平面中低压VDMOS 工艺技术制造。先进的工艺及元胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 14A，250V，RDS(on)(典型值)=0.28Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

Silan

士兰微

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：220.35 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

文件：157.91 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel MOSFET 250V, 10.2A, 0.28(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Featu

文件：844.18 Kbytes 页数：6 Pages

MGCHIP