650V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery

Super

超致半导体

650V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• Fast-Recovery body diode\n• Extremely Low Reverse Recovery Charge\n• 700V @TJ = 150 ℃\n• Typ. RDS(on) = 0.175Ω\n• Ultra Low Gate Charge (typ. Qg = 36.5nC)\n• 100% avalanche tested;

Super

超致半导体

650V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.\nThis advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with • Multi-Epi process SJ-FET\n• Fast-Recovery body diode\n• Extremely Low Reverse Recovery Charge\n• 700V @TJ = 150 ℃\n• Typ. RDS(on) = 0.175Ω\n• Ultra Low Gate Charge (typ. Qg = 36.5nC)\n• 100% avalanche tested;

Super

超致半导体

20A竊?50V N-CHANNEL MOSFET

文件：450.41 Kbytes 页数：6 Pages

KIA

可易亚半导体

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.19Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations f

文件：339.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.92 Kbytes 页数：2 Pages

ISC

无锡固电