20V N-Channel MOSFET

DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON)

文件：323.65 Kbytes 页数：4 Pages

Good-Ark

固锝电子

Battery protection

DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON)

文件：303.44 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：491.35 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

20V N-Channel MOSFET

文件：323.65 Kbytes 页数：4 Pages

Good-Ark

固锝电子

MOSFET

Silikron

新硅能微电子

MOSFET

Silikron

新硅能微电子