TIP141

NPNSILICONPOWERDARLINGTONS

TIP141

SILICONPOWERDARLINGTONCOMPLEMENTARYTRANSISTORS

TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching

TIP141

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=80V(Min) •ComplementtoTypeTIP146 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications.

TIP141

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

TIP141

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

TIP141

NPNSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TIP141

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

TIP141

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

TIP141

POWERTRANSISTORS(10A,60-100V,125W)

TIP141

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147