驱动芯片

Solomon

晶门半导体

Low voltage fast-switching PNP power transistor

Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ High current gain characteri

文件：149.29 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)( IC= -5A; IB= -0.25A) • DC Current Gain -hFE = 85(Min)@ IC= -5A • Fast -Switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • CCFL dirvers • V

文件：265.8 Kbytes 页数：3 Pages

ISC

无锡固电

SPACE QUALIFIED HYBRID DC-DC CONVERTERS

文件：884.12 Kbytes 页数：19 Pages

VPT