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IRFR9014PBF	文件：1.84209 Mbytes Page：10 Pages	HEXFET짰PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014PBF	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TR	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRL	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRL	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014TRLA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRLPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRPBF	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司	TECHPUBLIC
IRFR9014TRPBF	文件：1.02813 Mbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
IRFR9014TRPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRFR9014TRR	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU9014	文件：177.68 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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产品属性

产品编号：
SS9014DTA
制造商：
onsemi
类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
包装：
散装
晶体管类型：
NPN
不同 Ib、Ic 时 Vce 饱和压降（最大值）：
300mV @ 5mA，100mA
电流 - 集电极截止（最大值）：
50nA（ICBO）
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
400 @ 1mA，5V
频率 - 跃迁：
270MHz
工作温度：
150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-226-3，TO-92-3（TO-226AA）成形引线
供应商器件封装：
TO-92-3
描述：
TRANS NPN 45V 0.1A TO92-3

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	SS9014DTA	FAIRCHILD/仙童		TO-92	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市鹏顺微电子科技有限公司	SS9014DTA	ON Semiconductor	2022+	TO-92-3	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市惊羽科技有限公司	SS9014DTA	ON-安森美	24+25+/26+27+	TO-92-3	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市宏捷佳电子科技有限公司	SS9014DTA	onsemi	24+	TO-226-3,TO-92-3(TO-226AA)	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
瀚佳科技(深圳)有限公司	SS9014H	TOSHIBA	2020+	TO-92	16800	绝对原装进口现货,假一赔十,价格优势!	询价
深圳市芯为科技有限公司	SS9014H	TOSHIBA	2023+	TO-92	16800	芯为科技只有原装	询价
深圳市一线半导体有限公司	SS9015				500	真实现货库存	询价
深圳市弘为电子有限公司	SS9015	SAM	16+	原厂封装	3500	原装现货假一罚十	询价
深圳市永贝尔科技有限公司	SS9015	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市振宏微科技有限公司	SS9015	TO-92	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价

更多SS9014DTA供应商更新时间2024-5-29 14:49:00

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