CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description: The SS256 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumpti

文件：256.81 Kbytes 页数：8 Pages

SECELECTRONICS

上优电子

CMOS Omnipolar High Sensitivity Micropower Hall Switch

General Description: The SS256 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points. Features and Benefits – Operation down to 2.5V – Micropower consumpti

文件：238.48 Kbytes 页数：7 Pages

SECELECTRONICS

上优电子

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：99.45 Kbytes 页数：5 Pages

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：99.45 Kbytes 页数：5 Pages

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：99.45 Kbytes 页数：5 Pages

POINN