SS20015M

Low VF Schottky Barrier Diode 15V, 2.0A Rectifier

15V,2.0ARectifier Features •Smallswitchingnoise. •Lowforwardvoltage(IF=2A,VFmax=0.43V). •Ultrasmallpackagepermittingappliedsetstobesmallandslim(mountingheight0.85mm). Applications •Highfrequencyrectification(switchingregulators,converters,choppers).

SSC2001S

PowerFactorCorrectionContinuousConductionModeController

GeneralDescriptions TheSSC2000seriesproductsarepowerfactorcorrection(PFC)controllerICsofContinuousConductionMode(CCM).TheproductachieveshighpowerCCMsystems,withfewexternalcomponentsandnomultiplierbytheaveragecurrentcontrolmethod. Features ●ContinuousConduct

ST2001FX

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectortechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCEDPERFORMANCE ■FULLYINSULATEDPACKAGE(U.L.COMPLIANT)FOREASYMOUNTING ■HIGHVOLTAGECAP

ST2001HI

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheST2001HIismanufacturedusingDiffusedCollectortechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCHEDPERFORMANCE ■FULLYINSULATEDPACKAGEFOREASYMOUNTING ■HIGHVOLTAGECAPABILITY ■HIG

STE2001

65X128SINGLECHIPLCDCONTROLLER/DRIVER

DESCRIPTION TheSTE2001isalowpowerCMOSLCDcontrollerdriver.Designedtodrivea65rowsby128columnsgraphicdisplay,providesallnecessaryfunctionsinasinglechip,includingon-chipLCDsupplyandbiasvoltagesgenerators,resultinginaminimumofexternalscomponentsandinavery

STV2001

I2CSINGLEFREQUENCYDEFLECTIONPROCESSORAND120MHzRGBPREAMPLIFIER

DESCRIPTION TheSTV2001isanI2C-controlledmonolithicintegratedcircuitassembledinaTQFP44plasticpackage.Itcombinesbothadeflectionblock(horizontalandvertical,singlefrequencywithverypowerfulgeometrycorrection)anda120MHzRGBpre-amplifier. FEATURES Horizontaldeflection

SUF2001

DualNandP-channelTrenchMOSFET

SUF2001

HIGHEFFICIENTPLASTICSILICONRECTIFIERVOLTAGE:50TO1000VCURRENT:2.0A

VOLTAGE:50TO1000VCURRENT:2.0A FEATURE Lowpowerloss Highsurgecapability Ultrafastrecoverytimeforhighefficiency Hightemperaturesolderingguaranteed 250°C/10sec/0.375”leadlengthat5lbstension

SUF2001

30VDualN-andP-channelTrenchMSFET

Features •LowVGS(th):VGS(th)=1.0~3.0V •Smallfootprintduetosmallpackage •LowRGDS(on):N-ch,RDS(on)=24mΩ(@VGS=10V,ID=2.9A) P-ch,RDS(on)=66mΩ(@VGS=-10V,ID=-2.7A)

SUF2001

P-ChannelMOSFETusesadvancedtrenchtechnology