首页>SRC60R090BTF-G>规格书详情
SRC60R090BTF-G中文资料ETC数据手册PDF规格书
| 厂商型号 |
SRC60R090BTF-G |
| 功能描述 | 90mΩ, 600V, Super Junction N-Channel Power MOSFET |
| 丝印标识 | |
| 封装外壳 | TO-220F |
| 文件大小 |
1.01108 Mbytes |
| 页面数量 |
13 页 |
| 生产厂商 | List of Unclassifed Manufacturers |
| 企业简称 |
ETC |
| 中文名称 | 未分类制造商 |
| 原厂标识 |  |
| 数据手册 | |
| 更新时间 | 2025-5-16 23:00:00 |
| 人工找货 | SRC60R090BTF-G价格和库存，欢迎联系客服免费人工找货 |
SRC60R090BTF-G规格书详情
Sep. 2018, Rev.1.4 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD.
General Description
The Sanrise SRC60R090B is a high voltage
power MOSFET, fabricated using advanced super
junction technology. The resulting device has
extremely low on resistance, low gate charge and
fast switching time, making it especially suitable
for applications which require superior power
density and outstanding efficiency.
The SRC60R090B break down voltage is 600V
and it has a high rugged avalanche characteristics.
The SRC60R090B is available in TO-220F，TO-
263-2 and TO-247 packages.
Features
◼ Ultra Low RDS(ON) = 90mΩ @ VGS = 10V.
◼ Ultra Low Gate Charge, Qg=90.3nC typ.
◼ Intrinsic Fast-Recovery Body Diode
◼ Fast switching capability
◼ Robust design with better EAS performance
Application
◼ AC/DC Power Supply
◼ EV Charger
◼ PC / Sever / Telecom
