SRC60R090BT-E中文资料ETC数据手册PDF规格书

厂商型号	SRC60R090BT-E
功能描述	90mΩ, 600V, Super Junction N-Channel Power MOSFET
丝印标识	SRC60R090BTE
封装外壳	TO-247
文件大小	1.01108 Mbytes
页面数量	13 页
生产厂商	ETC List of Unclassifed Manufacturers
中文名称	未分类制造商
数据手册	下载地址一下载地址二
更新时间	2026-2-1 14:01:00
人工找货	SRC60R090BT-E价格和库存，欢迎联系客服免费人工找货

Sep. 2018, Rev.1.4 www.sanrise-tech.com Shenzhen Sanrise Technology Co., LTD.

General Description

The Sanrise SRC60R090B is a high voltage

power MOSFET, fabricated using advanced super

junction technology. The resulting device has

extremely low on resistance, low gate charge and

fast switching time, making it especially suitable

for applications which require superior power

density and outstanding efficiency.

The SRC60R090B break down voltage is 600V

and it has a high rugged avalanche characteristics.

The SRC60R090B is available in TO-220F，TO-

263-2 and TO-247 packages.

特性 Features

◼ Ultra Low RDS(ON) = 90mΩ @ VGS = 10V.

◼ Ultra Low Gate Charge, Qg=90.3nC typ.

◼ Intrinsic Fast-Recovery Body Diode

◼ Fast switching capability

◼ Robust design with better EAS performance

Application

◼ AC/DC Power Supply

◼ EV Charger

◼ PC / Sever / Telecom