| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SQJ848EP-T1>芯片详情
SQJ848EP-T1_NOVOSENSE/纳芯微电子_MOSFET 40V 30A 68W N-Ch Automotive得捷芯城商城
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SQJ848EP-T1
- 功能描述:
MOSFET 40V 30A 68W N-Ch Automotive
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SQJ560EP-T1_GE3
- SQJ858AEP-T1_BE3
- SQJ504EP
- SQJ858AEP-T1_GE3
- SQJ500AEP-T1-GE3
- SQJ858AEP-T1-BE3
- SQJ500AEP-T1_GE3
- SQJ858AEP-T1-GE3
- SQJ500AEP-T1_BE3
- SQJ858AEP-T2-GE3
- SQJ488EP-T2_GE3
- SQJ860EP
- SQJ488EP-T2_BE3
- SQJ860EP-T1_GE3
- SQJ488EP-T1-GE3
- SQJ860EP-T1-GE3
- SQJ488EP-T1-BE3
- SQJ868EP-T1_GE3
- SQJ488EP-T1_GE3
- SQJ872EP-T1_GE3
- SQJ488EP-T1_BE3
- SQJ886EP-T1_GE3
- SQJ488EP
- SQJ886EP-T1-GE3
- SQJ486EP-T1-GE3
- SQJ910AEP-T1_GE3
- SQJ486EP-T1_GE3
- SQJ910AEP-T1-GE3
- SQJ481EP-T1-GE3
- SQJ910AEP-T2_GE3
- SQJ481EP-T1_GE3
- SQJ912AEP-T1
- SQJ479EP-T1-GE3
- SQJ912AEP-T1_GE3
- SQJ479EP-T1-BE3
- SQJ912AEP-T1-GE3
- SQJ479EP-T1_GE3
- SQJ912AEP-T2_BE3
- SQJ479EP-T1_BE3
- SQJ912AEP-T2_GE3
- SQJ476EP-T1-GE3
- SQJ912BEP-T1_GE3
- SQJ476EP-T1_GE3
- SQJ912DEP-T1_GE3
- SQJ474EP-T2_GE3
- SQJ912EP-GE3
- SQJ474EP-T1_GE3
- SQJ912EP-T1-GE3
- SQJ469EP-T1-GE3
- SQJ914EP-T1_GE3



