Intrinsic fast-recovery body diode

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INFINEON

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500 V-950 V CoolMOS™ N 沟道功率 MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.\n Replacement for • Fourth series of CoolMOS™ market entry in 2004\n• Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low\n• Specific for phase-shift ZVS and DC-AC power applications\n\n优势:\n• Improved efficiency\n• More efficient, more compact, lighter and cooler\n• Outstanding reliability with prov;

Infineon

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文件：271.9 Kbytes 页数：2 Pages

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WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon N-Channel MOSFET

文件：225.29 Kbytes 页数：8 Pages

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司