丝印：SPW；Package：SOT23-3；Very Low Supply Current 3-Pin Microprocessor Reset Monitors

文件：105.88 Kbytes 页数：13 Pages

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安森美半导体

丝印：35N60C3；Package：PG-TO247；CoolMOSTM Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Pb-free lead plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：724.64 Kbytes 页数：11 Pages

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英飞凌

丝印：20N60C3；Package：PG-TO247；Cool MOS Power Transistor

文件：771.02 Kbytes 页数：13 Pages

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CoolMOS Power Transistor

文件：673.02 Kbytes 页数：13 Pages

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isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤700mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.29 Kbytes 页数：2 Pages

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无锡固电

ANALOG BOTTOM PORT SISONIC™ MICROPHONE

PRODUCT FEATURES • Extended Operating Temperature Range • Matched Sensitivity • LGA Package • Flat Frequency Response • Low phase disortion • High AOP • Bottom Port • Ultra-Stable Performance • Omnidirectional • Standard SMD Reflow

文件：3.11069 Mbytes 页数：10 Pages

KNOWLES

楼氏电子

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity

文件：119.8 Kbytes 页数：11 Pages

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Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：255.01 Kbytes 页数：12 Pages

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isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤380mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.59 Kbytes 页数：2 Pages

ISC

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Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi

文件：152.55 Kbytes 页数：12 Pages

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英飞凌