24N60PN

24A,600VDPMOSPOWERTRANSISTOR

GENERALDESCRIPTION SVS24N60F(FJ)(PN)(T)D2isanN-channelenhancementmodehigh voltagepowerMOSFETproducedusingSilan’sDPMOStechnology.It achieveslowconductionlossandswitchinglosses.Itleadsthedesign engineerstotheirpowerconverterswithhighefficiency,highpower densit

DAM24N60C

N-ChannelEnhancementModeMOSFET

FIR24N60ANG

N-ChannelPowerMOSFET

FQA24N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FQA24N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISPP24N60CFD

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.185Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISPW24N60CFD

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤185mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IXFA24N60X

iscN-ChannelMOSFETTransistor

IXFA24N60X

PreliminaryTechnicalInformation

IXFH24N60X

iscN-ChannelMOSFETTransistor