首页 >SPP20N60C3 HF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonly moderately | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
45A,600V,UFSSeriesN-ChannelIGBT ThisfamilyofMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately | Intersil Intersil Corporation | Intersil | ||
40A,600V,RuggedUFSSeriesN-ChannelIGBTs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.19Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
SPP20N60C3 HF
- 制造商：
Infineon Technologies AG
- 功能描述：
INFINEON.PG-TO220-3.TUBE.SPQ 500.MOQ 500/MPQ 500.TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEO |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INFINEON |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON |
23+ |
TO-220 |
12800 |
公司只有原装 欢迎来电咨询。 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-220 |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 | ||
Infineon(英飞凌) |
21+ |
TO-220 |
40 |
原装现货,假一罚十 |
询价 | ||
INFINEON |
21+ |
TO-220 |
40 |
原装现货假一赔十 |
询价 | ||
INFINEON |
1503+ |
TO220-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon Technologies |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 |
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