SPP17N80C3

N-Channel MOSFET Transistor

•DESCRIPTION •Highpeakcurrentcapability •Ultralowgatecharge •Ultraloweffectivecapacitances •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.29Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

SPP17N80C3

Marking：17N80C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3

Marking：17N80C3；Package：TO-220；CoolMOS Power Transistor Features New revolutionary high voltage technology

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

SPP17N80C3_07

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3_08

CoolMOS Power Transistor Features New revolutionary high voltage technology