Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：363.45 Kbytes 页数：13 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • New revolutionary high voltage technology • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on) ≤280mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and relia

文件：339.62 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：16N50C3；Package：PG-TO220；New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：1.9679 Mbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：1.9679 Mbytes 页数：14 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

文件：729.27 Kbytes 页数：14 Pages

Infineon

英飞凌

包装：散装 类别：工具 磨料和表面修整产品 描述：SCOTCH-BRITE SURFACE PREPARATION

3M

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 500V CoolMOS™ C3 is CoolMOS™ P7. \n 500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌