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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
12N60C3D	文件：124.82 Kbytes Page：8 Pages	24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G12N60C3D	文件：270.84 Kbytes Page：9 Pages	UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
HGTG12N60C3D	文件：270.84 Kbytes Page：9 Pages	UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
HGTG12N60C3D	文件：102.49 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso	HARRIS HARRIS corporation	HARRIS
HGTG12N60C3D	文件：98.21 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTG12N60C3D	文件：124.82 Kbytes Page：8 Pages	24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP12N60C3	文件：131.23 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
HGTP12N60C3	文件：131.23 Kbytes Page：6 Pages	24A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl	HARRIS HARRIS corporation	HARRIS
HGTP12N60C3	文件：119.57 Kbytes Page：6 Pages	24A,600V,UFSSeriesN-ChannelIGBTs TheHGTP12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP12N60C3D	文件：99.41 Kbytes Page：7 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HGTP12N60C3D	文件：154.92 Kbytes Page：8 Pages	24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybetwee	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
P12N60C3	文件：131.23 Kbytes Page：6 Pages	24A,600V,UFSSeriesN-ChannelIGBTs Description TheHGTP12N60C3,HGT1S12N60C3andHGT1S12N60C3SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchl	HARRIS HARRIS corporation	HARRIS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	SPP12N60C3	INF	22+	TO-262	6000	十年配单,只做原装	询价
深圳市创新迹电子有限公司	SPP12N60C3	Infineon	22+	TO-262	25000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	SPP12N60C3	INFINEON	23+	TO-262	8000	只做原装现货	询价
贸泽芯城（深圳）电子科技有限公司	SPP1304S32RGB	SYNCPOWER		SOT-323	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
中科航电（深圳）电子集团有限公司	SPP1304S32RGB	SYNCPOWER		SOT-323	90000	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市惊羽科技有限公司	SPP1304S32RGB	SYNCPOWE	24+25+/26+27+	SOT-323	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市弘为电子有限公司	SPP1305	INTERNATIONA	16+	原装进口原厂原包接受订货	4000	原装现货假一罚十	询价
深圳市百诺芯科技有限公司	SPP1305	SYNCPOWER擎力	23+	SOT-323	24190	原装正品代理渠道价格优势	询价
深圳市瑞卓芯科技有限公司	SPP1305	SYNCPOWER/擎力	22+	SOT-323	18000	原装正品	询价
深圳市华集芯实业有限公司	SPP1305	SYNCPOWER擎力	23+	SOT-323	6000	公司十几年如一日,只做原装正品,优势渠道保证每一片	询价

更多SPP12N60C3供应商更新时间2024-5-30 14:02:00

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