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11N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

ISPW11N80C3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA11N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA11N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA11N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA11N80C3

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA11N80C3

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA11N80C3

iscN-ChannelMOSFETTransistor

•FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP11N80C3

IscN-ChannelMOSFETTransistor

•FEATURES •Ultraloweffectivecapacitances •Lowgatecharge •Improvedtransconductance •Lowgatedrivepowerloss •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP11N80C3

CoolMOSTMPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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