SPP11N60C3MOS(场效应管)资料使用说明书原装现货-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
11N60C3	文件：1.84713 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
ISPP11N60C3	文件：339.13 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW11N60C3	文件：335.59 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60C3	文件：314.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60C3	文件：1.07096 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPA11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60C3	文件：659.64 Kbytes Page：16 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60C3	文件：662.11 Kbytes Page：15 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：475.58 Kbytes Page：13 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：1.04045 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPB11N60C3	文件：189.57 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPBI11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：662.11 Kbytes Page：15 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：659.64 Kbytes Page：16 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：331.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPP11N60C3	文件：1.03545 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	SPP11N60C3MOS(场效应管)	INFINEON/英飞凌	23+	TO220	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市威尔健半导体有限公司	SPP11N60C3MOS(场效应管)	INFINEON/英飞凌	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	SPP11N60C3MOS(场效应管)	INFINEON/英飞凌	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市云美电子科技有限公司	SPP11N60C3MOS(场效应管)	INFINEON/英飞凌	22+	TO-220	34137	只做原装进口现货	询价
深圳庞田科技有限公司	SPP11N60C3MOS(场效应管)	INFINEON/英飞凌	2023+	TO-220	20000	AI智能識别、工業、汽車、醫療方案LPC批量及配套一站	询价
深圳市诺美思科技有限公司	SPP11N60C3MOS(场效应管)	INFINEON/英飞凌	22+/23+	TO220	9800	原装进口公司现货假一赔百	询价
深圳市安富世纪电子有限公司	SPP11N60C3X	INFINEON	23+		8000	只做原装现货	询价
中天科工半导体（深圳）有限公司	SPP11N60C3XKSA1	INFINEON	20+	原装	65790	原装优势主营型号-可开原型号增税票	询价
深圳市艾宇欣科技有限公司	SPP11N60C3XKSA1	Infineon	1931+	N/A	493	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	SPP11N60C3XKSA1	INFINEON/英飞凌	2021+	TO-220-3	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

更多SPP11N60C3MOS(场效应管)供应商更新时间2024-6-22 17:18:00

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