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500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. \n CoolMOS™ CFD2 is rep ·Fourth series of CoolMOS™ market entry in 2004\n ·Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low\n ·Specific for phase-shift ZVS and DC-AC power applications;

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

MOSFET N-CH 100V 21A TO-262

Infineon

英飞凌